The scattering effects are studied in nanometer-scaled double-gate MOSFET,using Monte Carlo simulation. The non-equilibrium transport in the channel isanalyzed with the help of the spectroscopy of the number of scatteringsexperienced by electrons. We show that the number of ballistic electrons at thedrain end, even in terms of flux, is not the only relevant characteristic ofballistic transport. Then the drive current in the 15 nm-long channeltransistor generations should be very close to the value obtained in theballistic limit even if all electrons are not ballistic. Additionally, mostback-scattering events which deteriorates the ON current, take place in thefirst half of the channel and in particular in the first low field region.However, the contribution of the second half of the channel can not beconsidered as negligible in any studied case i.e. for a channel length below 25nm. Furthermore, the contribution of the second half of the channel tends to bemore important as the channel length is reduced. So, in ultra short channeltransistors, it becomes very difficult to extract a region of the channel whichitself determine the drive current Ion.
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